Nanoscale molybdenum disulfide memristors integrated onto standard CMOS chips achieve the lowest switching voltage reported ...

Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by ...

Nvidia’s data center revenues have skyrocketed, and hyperscaler capital expenditures soared past $70B in 2025, about double ...

Samsung Electronics’ non-memory semiconductor business is showing signs of a fast recovery, as its Exynos 2600 mobile ...

SK Hynix and Sandisk introduce High Bandwidth Flash under OCP, targeting AI inference with up to 1.6 TB/s bandwidth and 16× HBM capacity.

UFS 5.0 flash storage will power net-gen smartphones and other mobile devices, and will deliver read/write performance of around 10.8 GB/s.

The developers detailed their achievement in a conference paper “A 3.19pJ/bit Electro-Optical Router with 18ns Setup Frame-Level Routing and 1-6 Wavelength Flexible Link Capacity for Photonic ...

Recent advances in materials, devices, and system architectures are driving a new generation of computing beyond traditional CMOS, with neuromorphic ...

Starting with manufacturing in US, and extending to facilities in Germany and Singapore, as well as through GF’s manufacturing partnership in China ...

Researchers at the Massachusetts Institute of Technology have unveiled a novel chip-fabrication technique that could reshape hardware-level security for electronic systems by enabling paired ...

SandGrain, a developer of authentication technology for connected devices, has partnered with specialty foundry X-FAB to produce the CyberRock SGT1001 Token, a secure hardware component designed to ...