KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPH3R10AQM,” a 100V N-channel power MOSFET fabricated with Toshiba’s latest-generation ...
Toshiba Electronics Europe GmbH has introduced the TPHR6704RL, a 40V N-channel power MOSFET fabricated using its latest-generation U-MOS11-H process. The device is optimised for SMPS used in data ...
Find a downloadable version of this story in pdf format at the end of the story. TYPICAL HIGH-SIDE, n-channel, hot-swap “soft-switch” systems use a charge pump to drive the gate of an external MOSFET ...
The automotive sector is seeing a surge in the number of electronic components required, driven by demand for enhanced safety and convenience. At the same time, there’s a pressing need for improved ...
(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain ...
Using the latest generation of trench and polar power MOSFET technologies, both trench and polar P-channel power MOSFETs have been developed that retain all the features of comparable N-channel power ...
The P-channel power MOSFET of IXYS retail all features of the comparable N-channel power MOSFET such as very fast switching, voltage control, ease of paralleling and excellent temperature stability.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results